GRGT analysin physicam perniciosam (DPA) praebet componentium componentium passivum, machinis discretis et circuitibus integratis.
Pro processibus semiconductoribus provectis, DPA facultates chips infra 7nm operit, problemata in speciali capa vel um range includeri possunt;nam aerospace-gradus signandi elementa aeris cum aqua vaporum temperantia requisita, PPM-gradus analysis vaporum internae compositionis perfici potuit ut usus speciales requisita partium aeris signandi.
Integratae ambitus astulae, partes electronicae, cogitationes discretae, machinae electromechanicae, rudentes et connectores, microprocessores, logicae programmabiles cogitationes, memoria, AD/DA, bus interfaces, circulis digitalibus generalibus, analogas permutationes, analogas machinas, proin machinas, opes commeatus, etc.
GJB128A-97 Semiconductor discreta fabrica test methodo
GJB360A-96 electronic et electrica components test methodo
GJB548B-2005 Microelectronic fabrica test modos et rationes
● GJB7243-2011 Screening Technical Requirements for Military Electronic Components
● GJB40247A-2006 Analysis Physica Destructiva Methodus Military Electronic Components
QJ10003-2008 Screening Guide for Imported Components
MIL-STD-750D semiconductor discretus fabrica test methodo
MIL-STD-883G microelectronic fabrica test methodi et rationes
Genus test | Test items |
Non perniciosius items | Inspectio visiva externa, inspectio X-ray, PIND, signatio, fortitudo terminalis, inspectionis microscopii acustici |
Destructive item | Laser de-capsulation, e-capsulation chemicae, gasi internae compositionis analysis, inspectio visiva interna, SEM inspectio, vis compagis, robur tondendum, robur tenaces, chip delaminatio, inspectio substrata, PN junctura tingendi, DB FIB, loca calida detectio, locus lacus. deprehensio, crater deprehensio, ESD test |